FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1008UC1R2KGT | 1.2μH | 10% | 35 | 2 | |
| FHW1008UC1R2GGT | 1.2μH | 2% | 35 | 2 | |
| FHW0805UC1R2KGT | 1.2μH | 10% | 18 | 2.55 | |
| FHW0805UC1R2JGT | 1.2μH | 5% | 18 | 2.55 | |
| FHW1210HC1R0GGT | 1.0μH | 2% | 45 | 1.85 | |
| FHW1210HC1R0KGT | 1.0μH | 10% | 45 | 1.85 | |
| FHW1210HC1R0JGT | 1.0μH | 5% | 45 | 1.85 | |
| FHW1008UC1R0GGT | 1.0μH | 2% | 35 | 1.75 | |
| FHW1008UC1R0JGT | 1.0μH | 5% | 35 | 1.75 | |
| FHW1008UC1R0KGT | 1.0μH | 10% | 35 | 1.75 | |
| FHW0805UC1R0JGT | 1.0μH | 5% | 20 | 2.4 | |
| FHW0805UC1R0KGT | 1.0μH | 10% | 20 | 2.4 | |
| FHW0805UCR91KGT | 910nH | 10% | 20 | 2.28 | |
| FHW0805UCR91JGT | 910nH | 5% | 20 | 2.28 | |
| FHW1210HCR91GGT | 910nH | 2% | 45 | 1.85 |